The effect of implantation upon interdiffusion in single quantum wells was studied. The samples were implanted with 150keV Ar+ ions and then annealed (400 to 480C, 60s). It was found that implantation and annealing led to an intermixing of barrier and well material; thus causing a blue shift in the characteristic emission spectrum. An ion dose of 1014/cm2 and an annealing temperature of 400C led to a blue-shift of 0.08eV, as compared with a non-implanted reference sample. This indicated a significant enhancement of Cd and Mg interdiffusion by implantation.

D.Tönnies, G.Bacher, D.Eisert, A.Forchel, A.Waag, T.Litz, G.Landwehr: Applied Physics Letters, 1994, 65[25], 3194-6