It was shown that N ion implantation formed high-resistivity regions, in C-doped GaAs and Ga0.65Al0.35As, which remained compensated after annealing at 900C. This contrasted with the O or F implantation of C-doped GaAs, where the initial conductivity was recovered after annealing (800C for F, or 900C for O). In the case of C-doped Ga0.65Al0.35As, implanted N and O isolation was thermally stable, but F-implanted samples regained their initial conductivity after annealing at 700C. A dose-dependence was observed for the formation of thermally stable N-implant compensation in both materials. It was suggested that a C-N complex was the source of the compensating defect level in N-implanted samples.

J.C.Zolper, M.E.Sherwin, A.G.Baca, R.P.Schneider: Journal of Electronic Materials, 1995, 24[1], 21-4