The optical properties of Ga0.7Al0.3As were studied, as a function of the Si dopant concentration, by using photoluminescence techniques. It was found that the photoluminescence spectra exhibited peaks which were due to electron Si acceptors, and to Si-related complex defect transitions which were tentatively attributed to a Si acceptor which was coupled to an As vacancy (SiAs-VAs) and to a Si donor which was coupled to a Ga(Al) vacancy (SiIII-VIII). It was shown that the effect of each of these defects upon the optical properties depended strongly upon the growth parameters. The spectrum from a planar-doped sample also exhibited peaks which were related to Si complex defects.

A.M.De Paula, G.Medeiros-Ribeiro, A.G.De Oliveira: Journal of Applied Physics, 1994, 76[12], 8051-4