Quantitative features of Ga atom surface migration (migration length, migration time, hopping frequency) were obtained by the Monte Carlo simulation of molecular beam epitaxial growth of GaAs on flat and stepped (001) surfaces under various growth conditions. Changes in these parameters during growth, and the relationship between migration, surface roughness and bulk defect concentration, were considered.

N.V.Peskov: Surface Science, 1994, 306[1-2], 227-32