Infra-red measurements of the concentrations of H-B pairs, which formed in B-doped Si that had been heated in H2 gas and quenched from temperatures of between 900 and 1300C, led to a new determination of the H solubility:

[H](/cm3) =9.1 x 1021 exp[-1.80(eV)/kT]

There was some evidence that H2 molecules also formed. The presence of H led to an enhancement of the diffusivity of O impurities at temperatures below 500C. Suggestions that H was present in as-grown Czochralski Si were supported by the observation of H-C complexes, using photoluminescence techniques. The analysis of the structure of a H complex, by means of infra-red vibrational spectroscopy, was illustrated for the case of the H-CAs pair in GaAs.

R.C.Newman: Philosophical Transactions of the Royal Society A, 1995, 350[1693], 215-26