Local density functional theory was used to show that both the  and  dislocations were reconstructed. This was done by relaxing 158-atom H-terminated clusters of GaAs which contained 90 partial dislocations. The reconstruction was strongly affected by impurities. Thus, acceptor pairs destroyed the reconstruction of  partials but strengthened that of  dislocations. Donors had the opposite effect. The results had implications for the pinning of dislocations in GaAs.

P.Sitch, R.Jones, S.Oberg, M.I.Heggie: Physical Review B, 1994, 50[23], 17717-20