In order to account for the occurrence of a dragging regime which had been detected in material that was doped with 0.2at%In, a model was proposed which was based upon the existence of 2 populations of kinks along the dislocation line. These were free kinks, and kinks which were coupled to In atoms. By using a simple hypothesis for the variation in obstacle incorporation as a function of the distance that was traveled by the dislocation, the model gave a good description of the experimental results and permitted a high value of the additional barrier height (0.6eV) for In dragging to be derived.

A.Rakotobé, N.Burle, B.Pichaud, F.Louchet: Philosophical Magazine A, 1995, 71[3], 701-11