The effect of high-intensity ultrasonic vibrations upon the spectrum of deep electron traps in bulk n-type material was studied by means of deep-level transient spectroscopy. It was found that the ultrasonic treatment resulted in a marked reduction in the EL6 trap concentration and in the generation of 3 other traps. This suggested the ultrasound-driven transformation of defects which were associated with the traps. It was argued that the traps, EL6, EL5 and EL18, were associated with the native defects, AsGa-VAs, VGa-VAs and VGa, respectively. The defect transformations were described by 2 reactions which involved the emission of As interstitials.

T.Wosinski, A.Makosa, Z.Witczak: Semiconductor Science and Technology, 1994, 9[11], 2047-52