Residual damage in F and B ion-implanted samples was studied by using transmission electron microscopy before and after rapid heat treatment. The results failed to reveal the existence of extended defects in as-implanted materials. A dense network of interstitial dislocation loops was observed in B-implanted samples after annealing. Most of these dislocation defects were located in the GaAs layers rather than in the AlGaAs layers. Only small numbers of dislocation loops were found in F-implanted and annealed material. It was concluded that F was a better candidate than B for neutral impurity-induced disordering applications.

B.S.Ooi, A.C.Bryce, J.H.Marsh, J.Martin: Applied Physics Letters, 1994, 65[1], 85-7