Misfit dislocations in [001] GaAs/Ga0.75In0.25As/GaAs multi quantum-well heterostructures were studied by using transmission electron microscopy. Two sets of misfit dislocation networks were observed. One was a set of conventional 60 misfit dislocations which lay along <110>, and the other was a set of edge dislocations which lay along <100>. A qualitative explanation was suggested for the generation mechanism of the misfit dislocations which lay along <100>.

J.Zou, C.T.Chou, D.J.H.Cockayne, A.Sikorski, M.R.Vaughan: Applied Physics Letters, 1994, 65[13], 1647-9