Photoluminescence measurements were used to explore the microscopic stress distribution near to dislocations in GaAs which had been grown onto a Si substrate, and in planar homo-epitaxial GaAs which had been grown by metalorganic chemical vapor deposition. It was found that a compressive stress, due to lattice deformation, existed near to the dislocations. The dislocation dynamics were monitored by photoluminescence imaging, while applying an external stress by means of a needle. The density and location of dislocations could be artificially controlled to some extent.

Y.Naoi, S.Kurai, S.Sakai, T.Yang, Y.Shintani: Journal of Crystal Growth, 1994, 145[1-4], 321-5