Transmission electron microscopy was used to confirm that micro-twins in GaAs which had been grown on 4° off-(001) Si, by means of molecular beam epitaxy, formed preferentially on one of the {111}-type planes. A Schmid factor analysis of the stresses in the deposit showed that the favored plane was the one on which the resolved shear stress was highest; thus supporting a deformation twinning model for twin formation in the 2-dimensional growth of GaAs on off-cut Si substrates.

X.L.Wei, M.Aindow: Applied Physics Letters, 1994, 65[15], 1903-5