The formation, structure, and stability of H-correlated complexes which were created at Cd acceptors in these materials were studied after plasma charging as well as after H+ and/or He+ implantation at various energies. The complexes were monitored by using the perturbed angular correlation technique. In InP and GaP, the stability of Cd-H pairs was very similar (1.4 and 1.5eV) for comparable Cd concentrations. In the case of InAs, 2 different H-correlated configurations were observed. One was a Cd-H pair that was oriented in <111> lattice directions, while the second complex involved at least one H atom and radiation defects or, if favored by a defect-induced secondary mechanism, several H atoms.

D.Forkel-Wirth, N.Achtziger, A.Burchard, J.C.Correia, M.Deicher, T.Licht, R.Magerle, J.G.Marques, J.Meier, W.Pfeiffer, U.Reislöhner, M.Rüb, M.Toulemonde, W.Witthuhn, Isolde: Solid State Communications, 1995, 93[5], 425-30