Measurements were made of misfit dislocation propagation velocities in GexSi1-x epilayers which had been grown onto Ge(100) substrates instead of the usual Si(100) substrates. This geometry permitted the study of structures with a high x-value (greater than 0.8) and their comparison with previous measurements for x-values of up to 0.35, grown on Si(100). It was found that all of the data could be described by assuming a misfit dislocation velocity which was linear in the excess stress, and which incorporated a composition-dependent activation energy, with a linear variation between the bulk values for Si and Ge. The data on structures which were grown onto Si(100) or Ge(100) substrates were analyzed in terms of the diffusive double-kink model for dislocation motion.

R.Hull, J.C.Bean, L.J.Peticolas, B.E.Weir, K.Prabhakaran, T.Ogino: Applied Physics Letters, 1994, 65[3], 327-9