The effect of sub-threshold treatment with ultrasound upon the dislocation-related photoluminescence (D-bands) and electron beam-induced current contrast was studied in n-GexSi1-x-n-Si heterostructures. It was shown that the ultrasound treatment caused an increase in the intensity of the D1 and D2 bands, as well as changes in their linear polarization. The mechanisms which were proposed for the phenomena included ultrasound-stimulated dislocation gettering of the impurities and reorientation of the impurities in order to reduce strain near to the dislocations.

I.A.Buyanova, A.U.Savchuk, M.K.Sheinkman, M.Kittler: Semiconductor Science and Technology, 1994, 9[11], 2042-6