Misfit dislocation arrangements in metalorganic vapor phase epitaxial HgMnTe layers on CdTe and CdZnTe with (001), (111)B and (112)B growth orientations were studied by means of transmission electron microscopy. The observations revealed that the dislocation arrangement depended upon the substrate and its crystallographic orientation. The dislocations spread into HgMnTe layers which were grown on CdTe, but were confined to the interface when grown on CdZnTe. The dislocations tended to lie on (111)B planes for all of the growth orientations which were studied. In the case of (001) growth, an hexagonally shaped misfit dislocation network with some elongation along the [110] direction was observed. In the case of (112)B growth, the mismatch was relaxed by arrays of dislocations which lay along [110] and [111] in HgMnTe/CdTe, whereas the misfit dislocations lay mainly along [110], [011] and [101] for HgMnTe/CdZnTe. In the case of HgMnTe(111)B/CdZnTe, misfit dislocations with their Burgers vectors parallel to the interface were distributed near to the interface, while they lay along <110> directions in (111)B. The observations were explained in terms of interdiffusion at the interface, the relative stabilities of metal-Te bonds, and the absence of inversion symmetry in the zincblende structure.

H.Tatsuoka, K.Durose, M.Funaki: Journal of Crystal Growth, 1994, 145[1-4], 589-95