An X-ray topographical study was made of the dependence of the stress relaxation process, in strained quantum wells, upon time and temperature. The dependence of dislocation multiplication upon annealing time and temperature was compared with an empirical model for stress relaxation. A dislocation glide activation energy of 1.1eV was deduced from the model. The as-grown dislocation density was explained in terms of dislocation multiplication during growth. The dislocation density in InGaAs/InP quantum wells could be reduced by limiting the growth rate and growth temperature.

K.Mukai, M.Sugawara, S.Yamazaki: Journal of Crystal Growth, 1994, 145[1-4], 752-7