The effectiveness of a zero net strain structure in preventing the degradation of crystal quality in assemblies of up to 15 quantum wells was demonstrated. This could not be achieved in conventionally strained multiple quantum wells (1.5% compressive strain, 3nm thick). It was also shown that the zero net strain structure had a finite critical thickness, and dislocations other than 60 misfit dislocations were introduced into zero net strain structures when beyond the critical thickness.

T.Takiguchi, K.Goto, M.Takemi, A.Takemoto, T.Aoyagi, H.Watanabe, Y.Mihashi, S.Takamiya, S.Mitsui: Journal of Crystal Growth, 1994, 145[1-4], 892-7