A limitation of mobility, due to the scattering of a P vacancy-induced deep center in In0.5Ga0.5P which had been grown, by liquid-phase epitaxy, onto a (100)GaAs substrate, was investigated by using Hall mobility and deep-level transient spectroscopic techniques. Two types of scattering potential (Gaussian well, square well) were considered. It was found that the scattering potential could be described better by the Gaussian-well than by the square-well potential. The mobility was characterized by an inverse square-root temperature dependence between 77 and 400K. Point defect scattering severely reduced the total mobility as its concentration increased. The scattering behavior which occurred when an electron was trapped in the Gaussian potential well was also investigated quantitatively.

Q.S.Zhu, K.Hiramatsu, N.Sawaki, I.Akasaki, X.N.Liu: Journal of Applied Physics, 1994, 76[11], 7410-4