An investigation was made of the effect of the addition of Sb upon the properties of the defect states of pure amorphous Se. The trap levels were studied by using a combination of conventional thermally stimulated depolarization current spectroscopy and time-of-flight methods. Overall, the results showed that Sb introduced a new set of shallow traps for electrons, at energies which were 0.22, 0.34 and 0.45eV below the conduction band edge, in addition to those which already existed in pure Se. At the same time, the progressive addition of Sb markedly enhanced the deep trapping of holes.

V.I.Mikla, I.P.Mikhalko, J.J.Nagy: Journal of Physics - Condensed Matter, 1994, 6[40], 8269-75