Interactions between self-interstitials and {113} interstitial defects during the annealing out of implantation damage were studied. It was found that, at low damage levels, diffusion was ultra-fast and was driven by self-interstitials which were released directly from ion collision cascades. At higher damage levels, free self-interstitials were quenched by the nucleation of {113} defects. It was shown that the transient enhanced diffusion which had been detected in most previous studies arose from the subsequent dissolution of the {113} defects.

N.E.B.Cowern, G.F.A.Van de Walle, P.C.Zalm, D.W.E.Vandenhoudt: Applied Physics Letters, 1994, 65[23], 2981-3