The effect of the electrical deactivation of As was studied. High concentrations of As were implanted and were laser melt annealed so as create box-like fully electrically active As layers, with no residual implantation damage. The wafers were then subjected to low-temperature thermal cycles while a buried B layer monitored point defects. A marked enhancement of B diffusion was observed which suggested that As deactivation released large numbers of interstitials. This was explained in terms of a process in which the vacancies that were required by deactivated As structures were created by a deactivation-assisted Frenkel pair generation process, thus injecting interstitials.

P.M.Rousseau, P.B.Griffin, J.D.Plummer: Applied Physics Letters, 1994, 65[5], 578-80