Residual damage after Si, Ge, or Sn implantation, and annealing at high temperatures, was studied by means of capacitance-voltage measurements and deep-level transient spectroscopy. A critical dose was found which depended upon the implanted species and energy, and below which no electrically active defects were found within the detection limit of 2 x 10-5 of the background doping. The critical dose was found to scale with the number of beam-induced vacancies and was in remarkable agreement with the critical dose which had previously been established for the observation of structural defects, such as dislocation loops, by using transmission electron microscopy.

P.Kringhøj, J.S.Williams, C.Jagadish: Applied Physics Letters, 1994, 65[17], 2208-10