A 2-dimensional model was developed for the evolution of a group of dislocation loops which was introduced by high-dose ion implantation. The assumption of an asymmetrical triangular density distribution of periodically oriented dislocation loops provided an efficient model which reflected the non-uniform morphology of the loops, as observed by means of transmission electron microscopy. The effective pressure which arose from the ensemble of dislocation loops was calculated on the basis of established formulae for the pressure from a single circular loop. The pressure field that arose from the layer of dislocation loops largely affected the equilibrium point defect concentrations and boundary conditions which governed the emission and absorption of point defects. Solution of the pressure-dependent diffusion equations for a simplified loop distribution and geometry made it possible to model loop growth and shrinkage while incorporating statistical processes such as loop coalescence and dissolution during oxidation. Simulations which were based on the model revealed reduced interstitial supersaturations during oxidation and correctly predicted the variation in the number of captured Si atoms and the radii and densities of dislocation loops.

H.Park, K.S.Jones, M.E.Law: Journal of the Electrochemical Society, 1994, 141[3], 759-65