Conductivity methods were used  in situ  in order to investigate defect evolution and accumulation in implanted crystalline samples. Upon implantation with 400keV Si ions at room temperature, the initial conductivity of 0.04S/cm decreased to 2 x 10-6S/cm (a value which was typical of intrinsic Si) at a fluence of 1013/cm2. It then slowly increased at higher fluences. Deep-level transient spectroscopic, transmission electron microscopic, and annealing data demonstrated that the marked conductivity decrease at low fluences was the result of dopant compensation that was produced by deep levels in the band-gap which were introduced by di-vacancies and complex defects. At higher fluences, the conduction was dominated by electron hopping in a buried continuous amorphous layer which was produced by the implantation.

A.Battaglia, S.Coffa, F.Priolo, C.Spinella: Applied Physics Letters, 1994, 65[3], 306-8