Deep levels which were created by the H and O plasma treatment of n-type substrates were investigated by using deep-level transient spectroscopy at temperatures ranging from 77 to 300K. It was established that both types of plasma treatment, at temperatures ranging from 20 to 300C, generated deep levels in the Si band-gap which could be related to H- or O-containing complexes and di-vacancy defects. The defects were situated in the Si substrate, within about 1 of the Au/Si interface.

A.Szekeres, S.S.Simeonov, E.Kafedjiiska: Semiconductor Science and Technology, 1994, 9[10], 1795-9