Methods were considered for improving O precipitation uniformity by using the concept of the precipitation S-curve/S-band (relationship between the amount of precipitation, [Oi], and the initial interstitial O content, [Oi]0). Samples from 4 crystals with various axial [Oi]0 profiles were annealed. It was found that the crystals with the best axial [Oi]0 profile for the obtention of a uniform [Oi] profile had a low [Oi]0 value in the seed end and a higher and relatively constant [Oi]0 value in the middle part; with the highest [Oi]0 value at the tang end. In order to tailor an axial [Oi]0 profile for a target uniform value of [Oi], the S-band of the device first had to be obtained.

H.D.Chiou: Journal of the Electrochemical Society, 1994, 141[1], 173-8