By comparing the performance of devices which had been fabricated on epitaxial Si wafers with those which had been prepared on polished Czochralski Si wafers, it was found that the refresh time of memory devices which were prepared on polished Si wafers was strongly affected by grown-in defects. On the basis of the present results, the refresh time failure of memory devices could be attributed to several types of crystal defect. These included the D-defects which resulted from vacancy aggregation during crystal growth, and those which were associated with O precipitation.

S.S.Kim, W.Wijaranakula: Journal of the Electrochemical Society, 1994, 141[7], 1872-8