The correlation between minority carrier lifetime and deep-level transient spectroscopy was used to obtain information about the mechanisms of defect formation and annealing in Czochralski and float-zone material during high-temperature heating by lamp. Various energy levels which were introduced by lamp annealing were detected, and a good correlation with the lifetime behavior was observed for a donor at Ev+0.29eV. No direct effect of the O content was detected at 1050C while, at 750C, a gettering effect of O aggregates was found.

A.Poggi, E.Susi, M.A.Butturi, M.C.Carotta: Journal of the Electrochemical Society, 1994, 141[3], 754-8