The temperature dependence of minority-carrier recombination lifetimes in n-type Czochralski wafers revealed the presence of metastable recombination centers which were located near to the wafer surface. It was found that they were affected by the crystal pulling rate and the chemical surface treatment. The grown-in defects, which depended strongly upon the pulling rate, could contribute to the metastable surface centers.

H.Daio, A.Buczkowski, F.Shimura: Journal of the Electrochemical Society, 1994, 141[6], 1590-3