It was shown that the size of MeV ion-induced charge pulses from epitaxial Si0.875Ge0.125/Si depended upon the crystallographic and electrical properties of the 60 misfit dislocations which were present. These results were correlated with back-scattering and transmission ion channelling analyses. In the case of a sample in a non-channelling alignment, the measured ion-induced charge pulses depended upon the number of charge carriers which recombined at the dislocations. In the case of a sample in channelling alignment, the rotated (110) and (110) planes around the 60 dislocations affected the local rate of carrier generation and thus altered the size of the measured ion-induced charge pulses.

M.B.H.Breese, P.J.C.King, G.W.Grime: Applied Physics Letters, 1994, 65[25], 3227-9