A microstructural study was made of a <100> dark-line defect which formed during the degradation of II-VI blue-green light emitters. It was found that these defects lay in, or near to, the ZnCdSe quantum well and did not correspond to any dislocation network that was easily observable by transmission electron microscopy. It was suggested that they consisted of point defects or of small point-defect complexes.

S.Guha, H.Cheng, M.A.Haase, J.M.DePuydt, J.Qiu, B.J.Wu, G.E.Hofler: Applied Physics Letters, 1994, 65[7], 801-3