The structures and electronic properties of misfit dislocations in ZnSe/GaAs(001) heterojunctions were studied by means of cathodoluminescence, transmission electron microscopic, and photoluminescence techniques. In the case of undoped ZnSe epilayers, irregular dislocation segments which tended to lie roughly along [100] and [010] directions were observed, as well as long straight 60 dislocations which lay along [110] and [110] directions. In N-doped ZnSe epilayers (more than 1018/cm3), the misfit dislocations dissociated mainly into partial dislocations and made cross-slip and the formation of irregular dislocations more difficult. Only straight dislocations which lay along [110] and [110] were observed. Cathodoluminescence observations suggested that irregular dislocations trapped carriers more efficiently than did the dislocations which lay along <110>.

Y.Chen, X.Liu, E.Weber, E.D.Bourret, Z.Liliental-Weber, E.E.Haller, J.Washburn, D.J.Olego, D.R.Dorman, J.M.Gaines, N.R.Tasker: Applied Physics Letters, 1994, 65[5], 549-51