High-resolution electron microscopy was used to study misfit dislocations in ZnSe films which had been grown onto vicinal Si(001) substrates that were tilted by 4 towards the [110] axis. Images which were obtained with the electron beam parallel to the [110] direction showed that 60 dislocations predominated. On the other hand, mainly Lomer dislocations or closely-spaced 60 dislocations (separated by less than 2nm) were seen in views taken along the orthogonal direction. A model was proposed in order to explain the formation of the asymmetrical dislocation structure. This was based upon the propagation and formation mechanisms of misfit dislocations.

L.T.Romano, J.Knall, R.D.Bringans, D.K.Biegelsen: Applied Physics Letters, 1994, 65[7], 869-71