A study was made of the interfaces between hydrogenated amorphous Si thin-film transistors and oxide gate insulators by using the bias-annealing method. The transfer characteristics, before and after bias annealing, were measured and were used to deduce the field-effect density-of-states. The results showed that the density of states distribution was governed by the Fermi energy during thermal equilibration. The results were explained in terms of the defect-pool model.

Z.Chen, W.Xu: Thin Solid Films, 1994, 251[2], 96-8