The effect of low-temperature (up to 700C) annealing upon the thermal dissociation of H-passivated interface trap centers of the SiO2/Si(100) system was studied by using positron annihilation spectroscopy. It was found that the Si-H bonds dissociated with an activation energy of 2.60eV. By assuming that annealing generated trap centers with a single charge, it was deduced that positron data indicated that some 4.5 x 108 trap centers/cm2 were created by annealing at 600C.

R.Khatri, P.Asoka-Kumar, B.Nielsen, L.O.Roellig, K.G.Lynn: Applied Physics Letters, 1994, 65[3], 330-2