By using electron spin resonance techniques, a new electrically active point defect was detected in thermally grown SiO2 films on Si. The defect had a large capture cross-section for electrons when it was paramagnetic and for holes when it was diamagnetic (ESR-inactive). The g-tensor values, symmetry, and microwave power saturation characteristics were similar to those of the E family of amorphous SiO2 defect centers.

J.F.Conley, P.M.Lenahan, H.L.Evans, R.K.Lowry, T.J.Morthorst: Journal of Applied Physics, 1994, 76[12], 8186-8