An investigation was made of a possible lifetime-limiting defect, in as-grown 6H material, by using the optical detection of magnetic resonance technique. The defect was shown to be a deep-level center, with an energy level at about Ec-1.1eV, as deduced from the related deep photoluminescence emission and photo-excitation spectrum of the optically detected magnetic resonance signal. The fact that this defect had been observed in both bulk crystals and in epilayers, regardless of their doping type, indicated that this was a common basic defect in 6H SiC.

N.T.Son, E.Sörman, W.M.Chen, O.Kordina, B.Monemar, E.Janzén: Applied Physics Letters, 1994, 65[21], 2687-9