The behavior of N and P in 6H-type material was investigated by using electron paramagnetic resonance (10 and 140GHz) and electron-nuclear double resonance techniques. The P defects were introduced by the neutron transmutation of 30Si. Two sets of electron paramagnetic resonance spectra were observed which were due to 2 different P-related defects. Both of the spectra exhibited a strong temperature dependence. It was suggested that one of these spectra was due to isolated shallow P donors on Si sites, while the other was due to P-vacancy pair defects. The electronic structures of the shallow donors, P and N, were considered in terms of effective mass theory. It was shown that shallow P donors on hexagonal sites had not yet been observed.

S.Greulich-Weber, M.Feege, J.M.Spaeth, E.N.Kalabukhova, S.N.Lukin, E.N.Mokhov: Solid State Communications, 1995, 93[5], 393-7