The preparation of monocrystals of RuxFe1-xS2 was attempted by the use of chemical vapor transport and flux methods. Only a small amount of Fe could replace the Ru, and its distribution was inhomogeneous. The defect structure of the crystal was studied by using electron paramagnetic resonance methods. The presence of a S point defect was suggested to account for a spin S = ½ paramagnetic species. Electrical resistivity and Hall effect measurements revealed n-type semiconductor behavior. The results of optical absorption measurements indicated that the presence of small quantities of Fe shifted the absorption edge of the compound into the longer wavelength region.

M.Y.Tsay, S.H.Chen, C.S.Chen, Y.S.Huang: Journal of Crystal Growth, 1994, 144[1-2], 91-6