The back-scattering minimum yield was estimated, on the basis of simple approximations, for axial ion channelling in perfect crystals of various chalcopyrite compounds. Point defect concentrations of up to about 1021/cm3 were estimated for single crystals which had been grown by using the vertical Bridgman method. A simple power law relationship was found for the fluence dependence of the damage density in O-implanted monocrystals.

H.Neumann: Crystal Research and Technology, 1994, 29[7], 985-94