Tunnelling microscopy was used to excite electron standing waves in thin epitaxial layers of CoSi2 on Si(111). Misfit dislocation lines were observed in topographic images and could be correlated with domain boundaries which were detected in conductance images. This indicated that they separated regions of differing silicide thickness. These thickness transitions were expected to occur at interface steps, and be associated with the introduction of partial dislocations for strain relief in lattice mismatched systems.

J.A.Kubby, W.J.Greene: Surface Science Letters, 1994, 311[3], 695-702