Atomic thickness variations in epitaxial silicide films on Si(111) were spatially resolved and determined by using ballistic electron emission microscopy. Modulation spectroscopy was also used, and this revealed not only thickness variations but also large lateral variations near to interfacial steps and dislocations.

E.Y.Lee, H.Sirringhaus, H.Von Känel: Physical Review B, 1994, 50[19], 14714-7