The transport properties of bulk films (100nm or more in thickness) of Cu2-xTe, where x was between 0 and 0.025, were determined at temperatures of between 90 and 450K. The number of Cu vacancies was estimated to range from 8.2 x 1019 to 1.62 x 1021/cm3. A comparison with the number of free carriers suggested that all of the Cu vacancies were electrically active. The number of vacancies and the number of carriers increased markedly with increasing x-value.

B.A.Mansour, B.S.Farag, S.A.Khodier: Thin Solid Films, 1994, 247[1], 112-9