In n-type material which had been grown by metalorganic chemical vapor deposition, 2 new electronic defects were detected and were characterized by means of deep-level transient spectroscopy. Diodes were prepared which permitted unambiguous deep-level transient spectroscopic evaluation. The new deep levels exhibited thermal activation energies for electron emission of 0.49 and 0.18eV.

W.Götz, N.M.Johnson, H.Amano, I.Akasaki: Applied Physics Letters, 1994, 65[4], 463-5