The growth of thin silicide films on Si(111) surfaces was studied by using  in situ  transmission electron microscopy under ultra-high vacuum conditions. No immediate reaction of deposited Pd with Si was observed at room temperature. At about 200C, uniform silicide films could form. These thin films were found to grow into strained islands at high temperatures. Interfacial misfit dislocations, which were associated with interfacial steps, propagated across the strained islands and caused them to grow in layer-by-layer fashion at the interface. The strain fields which were associated with the misfit dislocations were suggested to be responsible for this behavior.

X.Tong, J.M.Gibson: Applied Physics Letters, 1994, 65[2], 168-70