The interdiffusion which occurred during the annealing of thin Fe films that had been grown epitaxially onto Ag(100) was investigated by means of spin-resolved inverse photo-emission spectroscopy. The films were grown at room temperature and were then heated to temperatures ranging from 100 to 400C. It was shown that the conditions under which interdiffusion took place imposed an upper limit of 200C for annealing. The best quality films were grown at a substrate temperature of 150C.

S.De Rossi, F.Ciccacci: Surface Science, 1994, 307-309, 496-500