It was recalled that H had several distinct effects in semiconductors. These included the neutralization of shallow impurities, the removal of deep states which acted as recombination centers, the catalytic enhancement of O diffusion, and the changing of the electrical characteristics of transition metal impurities. The basic theoretical methods that were used to investigate these effects were described here, together with the principal results and remaining problems.

R.Jones: Philosophical Transactions of the Royal Society A, 1995, 350[1693], 189-202