Investigations of the dynamics of muonium transitions using RF-SR and longitudinal depolarization measurements were described. Results for intrinsic and doped Si permitted the development of an essentially complete model for muonium dynamics. Energy barriers were compared with the few available measurements for H in Si. It was noted that, in intrinsic and p-type samples, 3 states (MuBC0, MuT0, MuBC+) were active. At high temperatures, rapid cycling between all 3 states was identified. In n-type samples, the MuT- state became important and numerous additional transitions became active. Parameters were deduced for 7 separate transition processes, and the features which were associated with several additional ones were identified.

R.L.Lichti: Philosophical Transactions of the Royal Society A, 1995, 350[1693], 323-33