The electronic properties of neutral ideal vacancies in such compounds were studied within a Green's function framework, using the tight-binding method. It was shown that deep levels in the fundamental energy gap were created only by cation T2 levels in phosphides and by anion A1 levels in Zn3As2. The cation T2 level for arsenides was degenerate (or nearly degenerate) with the top of the valence bands.

J.Szatkowski, K.Sieranski: Solid State Communications, 1995, 93[7], 595-8